Use of argon sputtering to modify surface properties by thin fil

Details Use of argon sputtering to modify surface properties by thin fil Use of argon sputtering to modify surface properties by thin fil

1997-01-17

1999-09-21

Brown, Peter Toby

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

438695, 438118, H01L 21203, H01L 2160

Patent

active

059565730

ABSTRACT:
A method of selectively and simultaneously depositing a non-reactive material such as a polyimide polymer to vertical sidewalls of a mesa-like structure is provided. The method of the present invention is useful in providing a modified mesa-like structure which prevents the flow of a reactive material along the vertical sidewalls of the mesa-like structure.

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IBM Technical Disclosure Bulletin, vol. 33, No. 10A, Mar. 1991, S.K. Kang and P. Murphy.

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