Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2006-07-28
2010-06-08
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S488000, C438S719000, C438S753000, C257SE23116, C257SE23128, C257SE21502
Reexamination Certificate
active
07732305
ABSTRACT:
In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
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Chen Xiao
Dalida Nicholas C.
Kim Yihwan
Li Xiaowei
Samoilov Arkadii V.
Applied Materials Inc.
Dugan & Dugan PC
Estrada Michelle
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