Use of Cl2 and/or HCl during silicon epitaxial film formation

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate

Reexamination Certificate

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C438S488000, C438S719000, C438S753000, C257SE23116, C257SE23128, C257SE21502

Reexamination Certificate

active

07732305

ABSTRACT:
In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.

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