Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2009-03-04
2010-06-01
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S057000, C438S073000, C438S455000, C438S458000, C257S617000, C257SE21568, C257SE21346, C257SE31032
Reexamination Certificate
active
07727866
ABSTRACT:
The manufacture of solar cells is simplified and cost reduced through by performing successive ion implants, without an intervening thermal cycle. In addition to reducing process time, the use of chained ion implantations may also improve the performance of the solar cell. In another embodiment, two different species are successively implanted without breaking vacuum. In another embodiment, the substrate is implanted, then flipped such that it can be and implanted on both sides before being annealed. In yet another embodiment, one or more different masks are applied and successive implantations are performed without breaking the vacuum condition, thereby reducing the process time.
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Bateman Nicholas
Gupta Atul
Murphy Paul
Sullivan Paul
Baptiste Wilner Jean
Smith Matthew
Varian Semiconductor Equipment Associates Inc.
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