Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1998-04-28
1999-12-07
Bowers, Charles
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438690, 438691, 438800, 257 17, 359344, H01L 3300
Patent
active
059982985
ABSTRACT:
A method is disclosed for fabricating a two- or three-dimensional photonic bandgap structure (also termed a photonic crystal, photonic lattice, or photonic dielectric structure). The method uses microelectronic integrated circuit (IC) processes to fabricate the photonic bandgap structure directly upon a silicon substrate. One or more layers of arrayed elements used to form the structure are deposited and patterned, with chemical-mechanical polishing being used to planarize each layer for uniformity and a precise vertical tolerancing of the layer. The use of chemical-mechanical planarization allows the photonic bandgap structure to be formed over a large area with a layer uniformity of about two-percent. Air-gap photonic bandgap structures can also be formed by removing a spacer material separating the arrayed elements by selective etching. The method is useful for fabricating photonic bandgap structures including Fabry-Perot resonators and optical filters for use at wavelengths in the range of about 0.2-20 .mu.m.
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Fleming James G.
Hetherington Dale L.
Lin Shawn-Yu
Smith Bradley K.
Bowers Charles
Christianson K
Hohimer John P.
Sandia Corporation
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