Formation of abrupt junctions in devices by using silicide...
Formation of active area using semiconductor growth process...
Formation of active area using semiconductor growth process...
Formation of amorphous carbon ARC stack having graded...
Formation of an etch stop layer within a transistor gate conduct
Formation of an interpoly capacitor structure using a...
Formation of capacitor having a Fin structure
Formation of carbon and semiconductor nanomaterials using...
Formation of conductive rugged silicon
Formation of conductive rugged silicon
Formation of conductive rugged silicon
Formation of confined halo regions in field effect transistor
Formation of controlled trench top isolation layers for...
Formation of dielectric layer employing high ozone:tetraethyl-or
Formation of dual gate oxide by two-step wet oxidation
Formation of dual work function gate electrode
Formation of finFET using a sidewall epitaxial layer
Formation of fully silicided (FUSI) gate using a dual...
Formation of high voltage transistor with high breakdown...
Formation of high-voltage and low-voltage devices on a semicondu