Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-04-05
2005-04-05
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S736000
Reexamination Certificate
active
06875664
ABSTRACT:
A method of forming an integrated circuit using an amorphous carbon hard mask involves providing an amorphous carbon material layer above a layer of conductive material and providing an anti-reflective coating (ARC) material layer above the amorphous carbon material. A transition region is formed intermediate the amorphous carbon material layer and the ARC material layer. The transition region has a concentration profile that provides a transition between the amorphous carbon material layer and the ARC material layer. A portion of the amorphous carbon material layer, the ARC material layer, and the transition region is removed to form a hard mask, and a feature is formed in the layer of conductive material according to the hard mask.
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Dakshina-Murthy Srikanteswara
Fisher Philip A.
Huang Richard J.
Tabery Cyrus E.
You Lu
Advanced Micro Devices , Inc.
Farahani Dana
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