Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-12-11
2007-12-11
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S216000, C438S281000, C438S283000, C438S285000, C438S290000, C438S294000, C438S295000, C438S296000, C438S299000, C438S302000, C257S347000, C257S349000, C257S350000, C257SE21151, C257SE21199
Reexamination Certificate
active
11422811
ABSTRACT:
A method of forming an abrupt junction device with a semiconductor substrate is provided. A gate dielectric is formed on a semiconductor substrate, and a gate is formed on the gate dielectric. A sidewall spacer is formed on the semiconductor substrate adjacent the gate and the gate dielectric. A thickening layer is formed by selective epitaxial growth on the semiconductor substrate adjacent the sidewall spacer. Raised source/drain dopant implanted regions are formed in at least a portion of the thickening layer. Silicide layers are formed in at least a portion of the raised source/drain dopant implanted regions to form source/drain regions, beneath the silicide layers, that are enriched with dopant from the silicide layers. A dielectric layer is deposited over the silicide layers, and contacts are then formed in the dielectric layer to the silicide layers.
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Advanced Micro Devices , Inc.
Ishimaru Mikio
Lebentritt Michael
Lee Kyoung
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