Formation of carbon and semiconductor nanomaterials using...

Details Formation of carbon and semiconductor nanomaterials using... Formation of carbon and semiconductor nanomaterials using...

2006-05-15

2009-06-09

Smith, Matthew (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

C977S890000, C977S932000, C977S936000, C977S938000, C977S840000, C438S149000, C438S151000, C438S154000, C438S161000, C438S197000, C257SE51040

Reexamination Certificate

active

07544546

ABSTRACT:
The invention is directed to a method of forming carbon nanomaterials or semiconductor nanomaterials. The method comprises providing a substrate and attaching a molecular precursor to the substrate. The molecular precursor includes a surface binding group for attachment to the substrate and a binding group for attachment of metal-containing species. The metal-containing species is selected from a metal cation, metal compound, or metal or metal-oxide nanoparticle to form a metallized molecular precursor. The metallized molecular precursor is then subjected to a heat treatment to provide a catalytic site from which the carbon nanomaterials or semiconductor nanomaterials form. The heating of the metallized molecular precursor is conducted under conditions suitable for chemical vapor deposition of the carbon nanomaterials or semiconductor nanomaterials.

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Eftekhari et al., High-Yield Synthesis of Carbon Nanotubes Using a Water-Soluble Catalyst Support in Catalytic Chemical Vapor Deposition, Iran, Letters to Editor/Carbon 44 (2006) 1343-1345, Jan. 9, 2006.

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