Formation of finFET using a sidewall epitaxial layer

Details Formation of finFET using a sidewall epitaxial layer Formation of finFET using a sidewall epitaxial layer

2006-07-18

2006-07-18

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S933000, C257SE21562

Reexamination Certificate

active

07078299

ABSTRACT:
A method of forming a finFET transistor using a sidewall epitaxial layer includes forming a silicon germanium (SiGe) layer above an oxide layer above a substrate, forming a cap layer above the SiGe layer, removing portions of the SiGe layer and the cap layer to form a feature, forming sidewalls along lateral walls of the feature, and removing the feature.

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