Formation of active area using semiconductor growth process...

Details Formation of active area using semiconductor growth process... Formation of active area using semiconductor growth process...

2007-03-06

2007-03-06

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S424000, C438S149000

Reexamination Certificate

active

10891540

ABSTRACT:
A semiconductor device can be formed without use of an STI process. An insulating layer is formed over a semiconductor body. Portions of the insulating layer are removed to expose the semiconductor body, e.g., to expose bare silicon. A semiconductor material, e.g., silicon, is grown over the exposed semiconductor body. A device, such as a transistor, can then be formed in the grown semiconductor material.

REFERENCES:
patent: 3476991 (1969-11-01), Mize et al.
patent: 3612960 (1971-10-01), Takeishi et al.
patent: 3634737 (1972-01-01), Maeda et al.
patent: 4768076 (1988-08-01), Aoki et al.
patent: 4857986 (1989-08-01), Kinugawa
patent: 4878957 (1989-11-01), Yamaguchi et al.
patent: 5384473 (1995-01-01), Yoshikawa et al.
patent: 5593915 (1997-01-01), Ohoka
patent: 5688893 (1997-11-01), Rahman et al.
patent: 5994188 (1999-11-01), Disney
patent: 6017801 (2000-01-01), Youn
patent: 6436748 (2002-08-01), Forbes et al.
patent: 6815277 (2004-11-01), Fried et al.
patent: 6900503 (2005-05-01), Oh et al.
patent: 6902962 (2005-06-01), Yeo et al.
patent: 6967132 (2005-11-01), Gonzalez et al.
patent: 6967351 (2005-11-01), Fried et al.
patent: 6972478 (2005-12-01), Waite et al.
patent: 2004/0070045 (2004-04-01), Suguro et al.
patent: 2004/0082165 (2004-04-01), Kuroi et al.
patent: 2004/0121507 (2004-06-01), Bude et al.
patent: 2004/0178452 (2004-09-01), Miyasaka
patent: 2004/0195646 (2004-10-01), Yeo et al.
patent: 2004/0253773 (2004-12-01), Kang
patent: 0 852 416 (1998-07-01), None
Sheikh, F., et al., “The Impact of Device Orientation on Width-Quantized FinFET Circuits,” EE 241 Spring 2004, pp. 1-6.
Yang, M., et al., “High Performance CMOS Fabricated on Hybrid Substrate With Different Crystal Orientations,” IEEE, IEDM, 2003, pp. 453-456.
Yang, J., et al., “Edge Transistor Elimination in Oxide Trench Isolated N-Channel Metal-Oxide-Semiconductor Field Effect Transistors,” 2001 American Vacuum Society, Feb. 5, 2001, pp. 327-332.

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