Formation of dielectric layer employing high ozone:tetraethyl-or
Formation of dual gate oxide by two-step wet oxidation
Formation of dual work function gate electrode
Formation of finFET using a sidewall epitaxial layer
Formation of fully silicided (FUSI) gate using a dual...
Formation of high voltage transistor with high breakdown...
Formation of high-voltage and low-voltage devices on a semicondu
Formation of highly conductive junctions by rapid thermal...
Formation of integrated circuit structure using one or more...
Formation of junctions by diffusion from a doped amorphous...
Formation of junctions by diffusion from a doped film at...
Formation of junctions by diffusion from a doped film into and t
Formation of laterally diffused metal-oxide semiconductor...
Formation of low resistance, ultra shallow LDD junctions employi
Formation of low thermal budget shallow abrupt junctions for...
Formation of memory cells and select gates of NAND memory...
Formation of metal gate electrode using rare earth alloy...
Formation of non-volatile memory device comprised of an...
Formation of novel DRAM cell capacitors by integration of capaci
Formation of out-diffused bitline by laser anneal