Formation of novel DRAM cell capacitors by integration of capaci

Details Formation of novel DRAM cell capacitors by integration of capaci Formation of novel DRAM cell capacitors by integration of capaci

1998-03-19

2000-07-18

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438249, 438258, 438391, 438392, 257301, H01L 218242, H01L 21336, H01L 2120, H01L 31119

Patent

active

060906618

ABSTRACT:
A DRAM cell capacitor is described. Capacitor formation and cell insolation methods are integrated by using existing isolation trench sidewalls to form DRAM capacitors. A doped silicon substrate adjacent to the vertical sidewalls of the isolation trench provides one DRAM cell capacitor plate. The DRAM capacitor also contains a dielectric material that partially covers the interior vertical sidewalls of the isolation trench. A conductive layer covering the dielectric material on the vertical sidewalls of the isolation trench forms the second capacitor plate and completes the DRAM capacitor.

REFERENCES:
patent: 4353086 (1982-10-01), Jaccodine et al.
patent: 4914740 (1990-04-01), Kenney
patent: 4916511 (1990-04-01), Douglas
patent: 4922313 (1990-05-01), Tsuchiya
patent: 4999689 (1991-03-01), Iguchi et al.
patent: 5026658 (1991-06-01), Fuse et al.
patent: 5041887 (1991-08-01), Kumagai et al.
patent: 5049959 (1991-09-01), Satoh
patent: 5075248 (1991-12-01), Yoon et al.
patent: 5112771 (1992-05-01), Ishii et al.
patent: 5200354 (1993-04-01), Om et al.
patent: 5273928 (1993-12-01), Tani
patent: 5315543 (1994-05-01), Matsuo et al.
patent: 5395786 (1995-03-01), Hsu et al.
patent: 5442211 (1995-08-01), Kita
patent: 5585285 (1996-12-01), Tang
patent: 5618745 (1997-04-01), Kita
patent: 5618751 (1997-04-01), Golden et al.
patent: 5701022 (1997-12-01), Kellner et al.
patent: 5844266 (1998-12-01), Stengl et al.
H. Hada, et al., "Using Anisotropical Selective Epitasial Silicon for Giga-Bit DRAMs," 1995, Kanagawa, Japan, IEEE.

Affiliated with

Also associated with

Rating

Formation of novel DRAM cell capacitors by integration of capaci does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Formation of novel DRAM cell capacitors by integration of capaci, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Formation of novel DRAM cell capacitors by integration of capaci will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2035917