Formation of junctions by diffusion from a doped film into and t

Details Formation of junctions by diffusion from a doped film into and t Formation of junctions by diffusion from a doped film into and t

1998-11-06

2000-08-01

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438301, 438392, 438369, 438542, 438664, 438923, H01L 218242

Patent

active

060965991

ABSTRACT:
High integrity shallow source/drain junctions are formed employing cobalt silicide contacts. Embodiments include depositing a layer of cobalt on a substrate above intended source/drain regions, depositing a cap layer of titanium or titanium nitride on the cobalt, depositing a doped film on the cap layer, and performing silicidation, as by rapid thermal annealing, to form a low-resistivity cobalt silicide and to diffuse impurities from the doped film through the cobalt silicide into the substrate to form a junction extending into the substrate a constant depth below the cobalt silicide interface. The formation of source/drain junctions self-aligned to the cobalt silicide/silicon interface prevents junction leakage while allowing the formation of cobalt silicide contacts at optimum thickness, thereby facilitating reliable device scaling.

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