Formation of low resistance, ultra shallow LDD junctions employi

Details Formation of low resistance, ultra shallow LDD junctions employi Formation of low resistance, ultra shallow LDD junctions employi

1998-07-31

2000-07-11

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438301, 438231, 148DIG53, H01L 21336

Patent

active

060872098

ABSTRACT:
Ultra shallow, low resistance LDD junctions are achieved by forming an LDD implant generating an interstitial-rich section and forming a sub-surface, non-amorphous region generating a vacancy-rich region substantially overlapping the interstitial rich region generated when forming the LDD implant. Embodiments include ion implanting, Ge or Si to form surface amorphous and sub-surface, non-amorphous regions, and implanting B or BF.sub.2 to form the impurity region. Embodiments include forming the sub-surface, non-amorphous region before or after generating the surface amorphous region, and forming the impurity region before or after forming the sub-surface, non-amorphous region but after forming the surface amorphous region.

REFERENCES:
patent: 4683645 (1987-08-01), Naguib et al.
patent: 4835112 (1989-05-01), Pfiester et al.
patent: 5362670 (1994-11-01), Iguchi et al.
patent: 5602045 (1997-02-01), Kimura
patent: 5654210 (1997-08-01), Aronowitz et al.
patent: 5710055 (1998-01-01), Kizilyalli
patent: 5770485 (1998-06-01), Gardner et al.
patent: 5858864 (1999-01-01), Aronowitz et al.
"Drain-Engineered Hot-Electron-Resistan Device Structures: A Review" (IEEE), pp 1125-1132, 1989.
"Eliminating channeling tail by lower dose preimplantation", (Appl. Phys. Lett 56 (13), pp 1231-1232, Mar. 26, 1990.
M.C. Ozturk., . . . into crystalline and ge preamorphized si, Appl. Phys. Lett. 52 (12), pp. 963-965, Mar. 21, 1988.
E. Ganin et al., "Shallow p+ junction formation by a reverse-type dopant preamorphization scheme", Appl. Phys. Lett. 54 (21), pp. 2127-2129, May 22, 1989.
S. Saito et al., "Defect reduction by MeV ion implantation for shallow junction formation", Appl. Phys. Lett. 63 (2), pp. 196-199, Jul. 12, 1993.
T.H. Huang et al., "Influence of fluorine preamorphization on the diffusion . . . ", Appl. Phys. Lett 65 (11), pp. 1829-1831, Oct. 3, 1994.
Y. Ono et al., "Segregation and . . . " Appl. Phys Lett 62 (4), pp. 375-377, Jan. 25, 1993.
A. Bousetta et al., "Si ultrashallow p+n junction using low-energy boron implantation", Appl. Phys. Lett 58 (15), pp. 1626-1628, Apr. 15,1991.

Affiliated with

Also associated with

Rating

Formation of low resistance, ultra shallow LDD junctions employi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Formation of low resistance, ultra shallow LDD junctions employi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Formation of low resistance, ultra shallow LDD junctions employi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-541650