Fabrication of a gate electrode stack using a patterned oxide la
Fabrication of a metalized blind via
Fabrication of a notched gate structure for a field effect...
Fabrication of a semiconductor device with air gaps for ultra-lo
Fabrication of a wide metal silicide on a narrow polysilicon...
Fabrication of a wide metal silicide on a narrow polysilicon...
Fabrication of B-doped silicon film by LPCVD method using...
Fabrication of CCD image sensors using single layer polysilicon
Fabrication of copper-containing region such as electrical...
Fabrication of deformable leads of microelectronic elements
Fabrication of dual work-function metal gate structure for...
Fabrication of dual work-function metal gate structure for...
Fabrication of gate and diffusion contacts in self-aligned conta
Fabrication of high resistivity structures using focused ion...
Fabrication of integrated circuits with borderless vias
Fabrication of integrated circuits with borderless vias
Fabrication of interconnects with two different thicknesses
Fabrication of nanoscale thermoelectric devices
Fabrication of self-aligned front gate and back gate of a...
Fabrication of self-aligned via holes in polymer thin films