Fabrication of dual work-function metal gate structure for...

Details Fabrication of dual work-function metal gate structure for... Fabrication of dual work-function metal gate structure for...

2006-04-25

2006-04-25

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S199000, C438S587000

Reexamination Certificate

active

07033919

ABSTRACT:
For fabricating dual gate structures of complementary transistors, a gate material is deposited into an opening disposed over a P-well and an N-well having the complementary transistors formed therein. An ion species is implanted into a portion of the gate material to form a first gate structure over one of the P-well or the N-well. The gate material remains to form a second gate structure over the other one of the P-well or the N-well. A thermal anneal is performed such that the ion species and the gate material react within the first gate structure.

REFERENCES:
patent: 4808261 (1989-02-01), Ghidini et al.
patent: 6130123 (2000-10-01), Liang et al.
patent: 6444512 (2002-09-01), Madhukar et al.
patent: 2004/0080001 (2004-04-01), Takeuchi

Affiliated with

Also associated with

Rating

Fabrication of dual work-function metal gate structure for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication of dual work-function metal gate structure for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of dual work-function metal gate structure for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3550814