Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-11-29
2005-11-29
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
06969679
ABSTRACT:
In a method for fabricating a nanowire thermoelectric device, a first electrode pattern is formed on a substrate, wherein the first electrode pattern includes bottom electrodes and a first set of connections which connects the bottom electrodes to form first and second groups of electrically connected bottom electrodes. P-type nanowires and n-type nanowires are selectively formed on the substrate by selectively activating either the first group of electrically connected bottom electrodes and the second group. The p-type and n-type nanowires are then connected by top electrodes. A first set of holes in the substrate is formed to remove the first set of connections. A second set of holes to allow for electrical access to the bottom electrodes, and a second set of connections are formed, so as to result in an array of thermocouples connected to each other in parallel banks of series-connected thermocouples.
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Kohler Timothy L.
Okamura Yoshimasa
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Nhu David
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