Fabrication of high resistivity structures using focused ion...

Details Fabrication of high resistivity structures using focused ion... Fabrication of high resistivity structures using focused ion...

2005-01-04

2005-01-04

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S771000, C438S763000, C438S641000, C438S676000

Reexamination Certificate

active

06838380

ABSTRACT:
The present invention provides a method for creating microscopic high resistivity structures on a target by directing a focused ion beam toward an impact point on the target and directing a precursor gas toward the impact point, the ion beam causing the precursor gas to decompose and thereby deposit a structure exhibiting high resistivity onto the target. The precursor gas preferably contains a first compound that would form a conductive layer and a second compound that would form an insulating layer if each of the first and second compounds were applied alone in the presence of the ion beam.

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