Fabrication of B-doped silicon film by LPCVD method using...

Details Fabrication of B-doped silicon film by LPCVD method using... Fabrication of B-doped silicon film by LPCVD method using...

2005-06-14

2005-06-14

Sarkar, Asok Kumar (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S925000, C438S935000

Reexamination Certificate

active

06905963

ABSTRACT:
A semiconductor device fabricating method for forming a boron doped silicon film includes the step of forming the boron doped silicon film on a substrate at an inner temperature of the reaction furnace ranging from about 460 to 600° C. or at an average velocity of reaction gases in the reaction furnace being not great than about 2200 cm/min. Further, a substrate processing apparatus for forming a boron doped silicon film on a substrate includes a gas supply line for supplying BCl3to the reaction furnace. The gas supply line is installed in a portion of the reaction furnace opposite to a heater, and has an outlet for discharging BCl3. The outlet of the gas supply line is provided at an upstream side of gas flow in the reaction furnace.

REFERENCES:
patent: 5654230 (1997-08-01), Jintate et al.
patent: 0467190 (1992-01-01), None
Fakhr-Eddine, “Application of Neural networks to modeling of Low-Pressure CVD (LPCVD) Reactors,” Chemical Engineering Journal (Lausanne); vol. 72 (2), p. 171-182 (1999) (English Abstract).
Wolf and Tauber, “Silicon Processing for the VLSI Era,” vol. 1, Chapter 6, p. 179, Lattice Press (1986).

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