Fabrication of a semiconductor device with air gaps for ultra-lo

Details Fabrication of a semiconductor device with air gaps for ultra-lo Fabrication of a semiconductor device with air gaps for ultra-lo

1998-01-21

2000-12-26

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438780, 438781, 438623, H01L 214763

Patent

active

061658901

ABSTRACT:
A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a norbornene-type polymer is used as a sacrificial material to occupy a closed interior volume in a semiconductor structure. The sacrificial material is caused to decompose into one or more gaseous decomposition products which are removed, preferably by diffusion, through an overcoat layer. The decomposition of the sacrificial material leaves an air gap or gaps at the closed interior volume previously occupied by the norbornene-type polymer. The air gaps may be disposed between electrical leads to minimize capacitive coupling therebetween.

REFERENCES:
patent: 4987101 (1991-01-01), Kaanta et al.
patent: 5103288 (1992-04-01), Sakamoto et al.
patent: 5266126 (1993-11-01), Deguchi
patent: 5324683 (1994-06-01), Fitch et al.
patent: 5461003 (1995-10-01), Havemenn
patent: 6071805 (2000-06-01), Liu
IBM Technical Disclosure Bulletin, "Reduced Capacitance Interconnect System Using Decomposition of Air Gap Filler Material", vol. 38, No. 9, Sep. 1, 1995, pp. 137-140.

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