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Strained Si/SiGe layers on insulator

Metal treatment – Barrier layer stock material – p-n type – With contiguous layer doped to degeneracy
Patent

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Structure for improving gate oxide integrity for a semiconductor

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
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Substrate for epitaxial growth

Metal treatment – Barrier layer stock material – p-n type
Reexamination Certificate

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Substrate structures for electronic devices

Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material
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Supersaturated rare earth doped semiconductor layers formed by c

Metal treatment – Barrier layer stock material – p-n type
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Surfactant-enhanced epitaxy

Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material
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Technique for the growth of planar semi-polar gallium nitride

Metal treatment – Barrier layer stock material – p-n type
Reexamination Certificate

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Thermally annealed wafers having improved internal gettering

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Reexamination Certificate

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Thin film single crystal diamond substrate

Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material
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Three dimensional integrated device

Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon
Reexamination Certificate

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Three dimensional semiconductor on insulator substrate

Metal treatment – Barrier layer stock material – p-n type
Patent

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Utilization of SiH4 soak and purge in deposition processes

Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon
Reexamination Certificate

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Wafer alignment mark utilizing parallel grooves and process

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
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Wafer and method of working the same

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Patent

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Wafer construction for making single-crystal semiconductor devic

Metal treatment – Barrier layer stock material – p-n type
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Wafer having a laser mark on chamfered edge

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
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Wafer having chamfered bend portions in the joint regions betwee

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Patent

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Wafer marking

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Reexamination Certificate

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Wafer of semiconductor material for fabricating integrated devic

Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon
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Wear resistant rails having capability of preventing propagation

Metal treatment – Barrier layer stock material – p-n type
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