Three dimensional semiconductor on insulator substrate

Metal treatment – Barrier layer stock material – p-n type

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148DIG11, 148DIG25, 148DIG71, 148DIG90, 148DIG152, 148 332, 148 333, 156613, 156603, 437 26, 437 33, 437 62, 437 82, 437108, 437973, 357 34, H01L 21248, H01L 21365, C30B 2504

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048348090

ABSTRACT:
A semiconductor substrate includes: a first monocrystalline semiconductive layer formed on the surface of a crystalline silicon substrate with the intervension of a first insulation film; a second insulation film set to the upper surface of the first monocrystalline semiconductive layer and provided with a plurality of apertures each having a specific pattern; and a second monocrystalline semiconductive layer which is epitaxially grown by the seed crystallization process and provided with the same crystalline characteristics as that of the first monocrystalline semiconductive layer.
Accordingly, the preferred embodiment of the present invention provides an extremely useful semiconductor substrate which easily isolates the elements of semiconductor devices between layers of insulating film described above.

REFERENCES:
patent: 3826699 (1974-07-01), Sawazaki et al.
patent: 3840409 (1974-10-01), Ashar
patent: 3855009 (1974-12-01), Lloyd et al.
patent: 3976511 (1976-08-01), Johnson
patent: 4147584 (1979-04-01), Garrison et al.
patent: 4368098 (1983-01-01), Manasevit
patent: 4448632 (1984-05-01), Akasaka
patent: 4490182 (1984-12-01), Scovell
patent: 4534099 (1985-08-01), Howe
patent: 4540452 (1985-09-01), Croset et al.
patent: 4569700 (1986-02-01), Toyama
patent: 4578142 (1986-03-01), Corboy, Jr. et al.
Roy A. Colclaser, "Microelectronics", John Wiley & Sons, New York, N.Y., 1980, p. 53.
John H. Douglas, "The Route to 3-D Chips", High Technology, Sep. 1983, pp. 55-59.
Ghandhi, VLSI Fabrication Principles, John Wiley & Sons, New York, N.Y., 4/5/1983, pp. 231-234.
Thorson et al., "Heteroepitaxial GaAs on Aluminum Oxide . . . ", J. Appl. Phys., vol. 42, No. 6, May 1971, pp. 2519-2527.

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