Metal treatment – Barrier layer stock material – p-n type
Patent
1987-09-09
1989-05-30
Hearn, Brian E.
Metal treatment
Barrier layer stock material, p-n type
148DIG11, 148DIG25, 148DIG71, 148DIG90, 148DIG152, 148 332, 148 333, 156613, 156603, 437 26, 437 33, 437 62, 437 82, 437108, 437973, 357 34, H01L 21248, H01L 21365, C30B 2504
Patent
active
048348090
ABSTRACT:
A semiconductor substrate includes: a first monocrystalline semiconductive layer formed on the surface of a crystalline silicon substrate with the intervension of a first insulation film; a second insulation film set to the upper surface of the first monocrystalline semiconductive layer and provided with a plurality of apertures each having a specific pattern; and a second monocrystalline semiconductive layer which is epitaxially grown by the seed crystallization process and provided with the same crystalline characteristics as that of the first monocrystalline semiconductive layer.
Accordingly, the preferred embodiment of the present invention provides an extremely useful semiconductor substrate which easily isolates the elements of semiconductor devices between layers of insulating film described above.
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Bunch William
Hearn Brian E.
Sharp Kabushiki Kaisha
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