Wafer having chamfered bend portions in the joint regions betwee

Details Wafer having chamfered bend portions in the joint regions betwee Wafer having chamfered bend portions in the joint regions betwee

1991-10-29

1993-07-27

Chaudhuri, Olik

Metal treatment

Barrier layer stock material, p-n type

With recess, void, dislocation, grain boundaries or channel...

437225, 437249, H01L 2930

Patent

active

052307476

ABSTRACT:
A wafer having chamfered bent portions in the joint regions between the contour of the wafer and the cut-away portion of the wafer such as an orientation flatness. The chipping of the wafer can be prevented, and in coating the wafer with a photoresist, forming an epitaxially grown layer on the wafer, etc., films having desired characteristics can be provided on the surface of the wafer.

REFERENCES:
patent: 3951728 (1976-04-01), Egashira et al.
patent: 4228937 (1980-10-01), Tocci
patent: 4256229 (1981-03-01), Lee
patent: 4344260 (1982-08-01), Ogiwara
patent: 4488930 (1984-12-01), Koe
patent: 4630093 (1986-12-01), Yamaguchi et al.
patent: 4783225 (1988-11-01), Maejima et al.
IBM Technical Disclosure Bulletin, vol. 22, No. 3 (Aug. 1979), "Diagnostic Method for Locating the Wafer Position in a Crystal".
IBM Technical Disclosure Bulletin, vol. 11, No. 12, (May 1969), "Duffusion Boat".
Semiconductor Silicon Manufacturing and Machining Using Diamond Tools-G. Janus, Burghausen, IDR13 Nr. 3, pp. 234-242 (1979).
Silicon Wafers with Optimum Edge Rounding, Solid State Technology, pp. 16-17, May 1976.
Solid State Technology, May 1976, vol. 19, Magazine 5, pp. 37-42.
Industrie Diamanten Rundschau, IDR 13 (1979), No. 3, pp. 234-242 (in German).

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