Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material
Patent
1988-03-08
1989-09-05
Hearn, Brian E.
Metal treatment
Barrier layer stock material, p-n type
With contiguous layers of different semiconductive material
148 333, 148DIG148, 437100, 437103, C30B 2502, C30B 2904, C30B 2518
Patent
active
048635294
ABSTRACT:
A thin film single crystal diamond substrate which comprises a base substrate selected from the group consisting of a single crystal silicon substrate and a single crystal GaAs substrate, an intermediate layer consisting of single crystal silicon carbide formed on the base substrate and a thin film of single crystal diamond which is epitaxially grown on the intermediate layer, which can have a large area and be easily and economically produced.
REFERENCES:
patent: 4548658 (1985-10-01), Cook
Nishino et al., Applied Physics Letters, vol. 42, No. 5, Mar. 1, 1985, pp. 460-462.
Woollam et al., "Optical and Interfacial Electronic Properties of Diamond-Like Carbon Films", Thin Solid Films, vol. 119, 1984, pp. 121-126.
Koeppe et al., "Summary Abstract: Characterization of Ion Beam Deposited Diamondlike Carbon Coating on Semiconductors", J. Vac. Sci. Technol. A, vol. 3, No. 6, Nov./Dec. 1985, pp. 2327-2328.
Nishino et al., "Production of Large-Area Single-Crystal Wafers of Cubic SiC for Semiconductor Devices", Appl. Phys. Lett., vol. 42, No. 5, Mar. 1, 1983, pp. 460-462.
Fujimori et al., "Characterization of Conducting Diamond Films," Vacuum, vol. 36, Nos. 1-3, pp. 99-102, 1986.
Balakov et al., "Deposition of Carbon Films with Diamondlike Properties from an Acetylene-Krypton Plasma", Sov. Phys. Tech. Phys., vol. 27, No. 4, Apr. 1982, pp. 521-522.
Warner et al., "Plasma Deposited Hydrogenated Carbon on GaAs and InP", J. Vac. Sci. Technol. A, vol. 3, No. 3, May/Jun. 1985, pp. 900-903.
Sawabe et al., "Growth of Diamond Thin Films by Electron Assisted Chemical Vapor Deposition", Appl. Phys. Lett., vol. 46, No. 2, Jan. 15, 1985, pp. 146-147.
Sawabe et al., "Growth of Diamond Thin Films by Electron-Assisted Chemical Vapour Deposition and Their Characterization", Thin Solid Films, vol. 137, No. 1, Mar. 1, 1986, pp. 89-99.
Fujimori Naoji
Imai Takahiro
Hearn Brian E.
Sumitomo Electric Industries Ltd.
Wilczewski Mary
LandOfFree
Thin film single crystal diamond substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film single crystal diamond substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film single crystal diamond substrate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-240976