Thin film single crystal diamond substrate

Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material

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148 333, 148DIG148, 437100, 437103, C30B 2502, C30B 2904, C30B 2518

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048635294

ABSTRACT:
A thin film single crystal diamond substrate which comprises a base substrate selected from the group consisting of a single crystal silicon substrate and a single crystal GaAs substrate, an intermediate layer consisting of single crystal silicon carbide formed on the base substrate and a thin film of single crystal diamond which is epitaxially grown on the intermediate layer, which can have a large area and be easily and economically produced.

REFERENCES:
patent: 4548658 (1985-10-01), Cook
Nishino et al., Applied Physics Letters, vol. 42, No. 5, Mar. 1, 1985, pp. 460-462.
Woollam et al., "Optical and Interfacial Electronic Properties of Diamond-Like Carbon Films", Thin Solid Films, vol. 119, 1984, pp. 121-126.
Koeppe et al., "Summary Abstract: Characterization of Ion Beam Deposited Diamondlike Carbon Coating on Semiconductors", J. Vac. Sci. Technol. A, vol. 3, No. 6, Nov./Dec. 1985, pp. 2327-2328.
Nishino et al., "Production of Large-Area Single-Crystal Wafers of Cubic SiC for Semiconductor Devices", Appl. Phys. Lett., vol. 42, No. 5, Mar. 1, 1983, pp. 460-462.
Fujimori et al., "Characterization of Conducting Diamond Films," Vacuum, vol. 36, Nos. 1-3, pp. 99-102, 1986.
Balakov et al., "Deposition of Carbon Films with Diamondlike Properties from an Acetylene-Krypton Plasma", Sov. Phys. Tech. Phys., vol. 27, No. 4, Apr. 1982, pp. 521-522.
Warner et al., "Plasma Deposited Hydrogenated Carbon on GaAs and InP", J. Vac. Sci. Technol. A, vol. 3, No. 3, May/Jun. 1985, pp. 900-903.
Sawabe et al., "Growth of Diamond Thin Films by Electron Assisted Chemical Vapor Deposition", Appl. Phys. Lett., vol. 46, No. 2, Jan. 15, 1985, pp. 146-147.
Sawabe et al., "Growth of Diamond Thin Films by Electron-Assisted Chemical Vapour Deposition and Their Characterization", Thin Solid Films, vol. 137, No. 1, Mar. 1, 1986, pp. 89-99.

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