Technique for the growth of planar semi-polar gallium nitride

Details Technique for the growth of planar semi-polar gallium nitride Technique for the growth of planar semi-polar gallium nitride

2007-05-22

2007-05-22

Fourson, George (Department: 2823)

Metal treatment

Barrier layer stock material, p-n type

C438S046000, C438S047000, C438S479000, C257SE21113, C257SE21463

Reexamination Certificate

active

11372914

ABSTRACT:
A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {1011} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {1013} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {1122} gallium nitride (GaN) grown on a {1100} sapphire substrate, and (4) {1013} gallium nitride (GaN) grown on a {1100} sapphire substrate.

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