Surfactant-enhanced epitaxy

Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material

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148 335, 148DIG72, 148DIG97, 257 19, 257616, 438 95, 438936, 438106, H01L 21203, H01L 29165

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056288344

ABSTRACT:
The present invention broadly concerns layered structures of substantially-crystalline materials and processes for making such structures. More particularly, the invention concerns epitaxial growth of a substantially-crystalline layer of a first material on a substantially-crystalline second material different from the first material utilizing an approximately one monolayer thick monovalent surfactant element.

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