Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Patent
1998-03-09
1999-12-21
Bowers, Charles
Metal treatment
Barrier layer stock material, p-n type
With recess, void, dislocation, grain boundaries or channel...
2576202, 414936, 438959, 438401, 438462, H01L 2176
Patent
active
060044055
ABSTRACT:
A wafer 1 has a chamfered edge 2 polished to specular glossiness, and a laser mark for indication of crystal orientation is put on the chamfered edge 2. Another laser mark 4 for indication of specification, production number, identification, etc. may be carved as a bar code on the chamfered edge 2. These marks 3, 4 are carved on the chamfered edge 2 by laser marking which does not put any harmful influences on the wafer 1.
REFERENCES:
patent: 4418467 (1983-12-01), Iwai
patent: 5800906 (1998-09-01), Lee et al.
patent: 5876819 (1999-03-01), Kimura et al.
Asakawa Keiichiro
Oishi Hiroshi
Bowers Charles
Super Silicon Crystal Research Institute Corp.
Thompson Craig
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