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IGBT module construction

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents
Patent

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IGBT or like semiconductor device of high...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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IGBT power device with improved resistance to reverse power puls

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent

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IGBT semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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IGBT with a Schottky barrier diode

Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – In integrated structure
Reexamination Certificate

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IGBT with amorphous silicon transparent collector

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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IGBT with channel resistors

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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IGBT with freewheeling diode

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent

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IGBT with increased ruggedness

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With switching speed enhancement means
Patent

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IGBT with injection regions between MOSFET cells

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate

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IGBT with integrated control

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent

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IGBT with monolithic integrated antiparallel diode

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area
Reexamination Certificate

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IGBT with PN insulation and production method

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Reexamination Certificate

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IGBT with reduced forward voltage drop and reduced switching...

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate

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IGBT with self-aligning cathode pattern and method for producing

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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IGBT with trench gate structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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IGBT, control circuit, and protection circuit on same substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure
Reexamination Certificate

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IGFET and tuning circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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IGFET circuit preventing parasitic diode current

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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IGFET device having a RF capability

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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