Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-04-07
1995-05-09
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257378, 257401, 437 40, 437233, 437913, H01L 2702, H01L 21265
Patent
active
054142903
ABSTRACT:
An insulated-gate bipolar transistor (IGBT) is specified, the collector (7) and source regions (8) of which can be produced by means of a self-aligning method. This provides an IGBT which is distinguished by a homogeneous turn-off current distribution. For this purpose, the width W of the source regions (8) is selected to be so small that holes can flow laterally into the surrounding collector region. In this connection it must be ensured that the voltage drop across the PN junction of the source regions and collector regions remains below the inherent forward voltage at any time. In consequence, the IGBT according to the invention is particularly insensitive to latch-up.
REFERENCES:
patent: 5285094 (1994-02-01), Mori et al.
patent: 5321281 (1994-06-01), Yamaguchi et al.
D. W. Tsang, "A Single Critical Mask Process for Manufacturing Very Large Area . . . ", EPE Journal, vol. 2, No. 2, Jun. 1992, pp. 95-100.
Hefner et al., "A Performance Trade-Off for the Insulated Gate . . . ", IEEE Trans. on Power Electronics, vol. PE-2, No. 3, Jul. 1987, pp. 194-207.
Search Report.
ABB Management AG
Wojciechowicz Edward
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