Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-12-04
2007-12-04
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S328000, C257S335000, C257S339000, C257S340000, C257S341000, C257S367000, C257S409000, C257S487000, C257S488000
Reexamination Certificate
active
11432907
ABSTRACT:
A multiple-cell insulated-gate-bipolar-transistor chip is disclosed which includes a semiconductor substrate having formed therein a p+-type collector region and an n−-type base region, with a pn junction therebetween. An annular trench is etched in the substrate so as to surround the array of IGBT cells. Received in the trench are a dielectric layer which is held against the base region, and an electroconductive layer which is held against the base region via the dielectric layer and which is electrically coupled to the collector region. When the pn junction between the collector and base regions is reverse biased, the electroconductive layer creates at the annular periphery of the base region a depletion layer which is joined to a depletion layer created in the base region by the pn junction, thereby preventing current leakage from the side surfaces of the IGBT chip.
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Sanken Electric Co. Ltd.
Soward Ida M.
Woodcock Washburn, L
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