IGFET circuit preventing parasitic diode current

Details IGFET circuit preventing parasitic diode current IGFET circuit preventing parasitic diode current

1997-06-10

1998-08-04

Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257335, 257360, H01L 2976, H01L 2362

Patent

active

057897794

ABSTRACT:
The invention has the object of realizing a semiconductor device in which the various problems brought about by parasitic diodes in configuring a circuit are prevented, the semiconductor device being provided with first and second insulated-gate field-effect transistors, and being configured such that the source regions of the first and second insulation gate field-effect transistors are electrically connected, the back gate region, which in part constitutes a channel, and the source region of the first insulated-gate field-effect transistor are electrically connected, and the back gate region of the second insulated-gate field-effect transistor is electrically connected to the drain region of the first insulated-gate field-effect transistor.

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