IGBT semiconductor device

Details IGBT semiconductor device IGBT semiconductor device

2011-07-05

2011-07-05

Hu, Shouxiang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S138000, C257S327000, C257SE29027

Reexamination Certificate

active

07973363

ABSTRACT:
To provide a semiconductor device in which dielectric breakdown strength in a peripheral region is increased without increasing on-resistance. An IGBT comprises a body region, guard ring, and collector layer. The body region is formed within an active region in a surface layer of a drift layer. The guard ring is formed within a peripheral region in the surface layer of the drift layer, and surrounds the body region. The collector layer is formed at a back surface side of the drift layer, and is formed across the active region and the peripheral region. A distance F between a back surface of the guard ring and the back surface of the drift layer is greater than a distance between a back surface of the body region and the back surface of the drift layer. A thickness H of the collector layer in the peripheral region is smaller than a thickness D of the collector layer in the active region.

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Extended European Search Report dated Oct. 19, 2010 for EP Appl. No. 08848331.8.

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