IGBT with PN insulation and production method

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode

Reexamination Certificate

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Reexamination Certificate

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06914270

ABSTRACT:
The IGBT (insulated gate bipolar transistor) has a weakly doped drift zone of a first conductivity formed in a weakly doped semiconductor substrate of the same conductivity. A highly doped first well zone of the first conductivity and a highly doped second well zone of a second conductivity are arranged between the drift zone and the semiconductor substrate.

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