IGBT with amorphous silicon transparent collector

Details IGBT with amorphous silicon transparent collector IGBT with amorphous silicon transparent collector

2006-02-28

2006-02-28

Pham, Hoai (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S135000

Reexamination Certificate

active

07005702

ABSTRACT:
The collector or anode of a non-punch through IGBT formed in a float zone silicon wafer is formed by a P doped amorphous silicon layer deposited on the back surface of an ultra thin wafer. A DMOS structure is formed on the top surface of the wafer before the bottom structure is formed. A back contact is formed over the amorphous silicon layer. No alloy step is needed to activate the anode defined by the P type amorphous silicon.

REFERENCES:
patent: 4414557 (1983-11-01), Amemiya et al.
patent: 4436761 (1984-03-01), Hayashi et al.
patent: 5451544 (1995-09-01), Gould
patent: 5744817 (1998-04-01), Shannon
patent: 6100572 (2000-08-01), Kinzer
patent: 59075679 (1984-04-01), None

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