IGBT with injection regions between MOSFET cells

Details IGBT with injection regions between MOSFET cells IGBT with injection regions between MOSFET cells

2007-06-26

2007-06-26

Menz, Douglas M. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S331000, C257S355000

Reexamination Certificate

active

11407489

ABSTRACT:
A cellular MOSgated device of planar or trench topology has base injection regions formed between pairs of cells to inject minority carriers to modulate the resistivity of the drift region.

REFERENCES:
patent: 5168331 (1992-12-01), Yilmaz

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