IGBT with trench gate structure

Details IGBT with trench gate structure IGBT with trench gate structure

1997-12-05

2000-06-06

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257139, 257140, 257147, 257378, 257341, H01L 29745, H01L 2978

Patent

active

060722142

ABSTRACT:
An IGBT includes two trenches extending from an emitter terminal toward a first side of a substrate of a first conductivity material. A collector layer of a second conductivity material is disposed on a second side of the substrate. The trenches each have a gate and a insulator within them. On the outside of the trenches, bulk regions of a second conductivity type are disposed on the first side of the substrate. On top of the bulk regions are bulk connection regions of a second conductivity type and source regions of a first conductivity type. The emitter couples the bulk and source regions. A material of either conductivity type, an insulator, or two MOSFETS are placed between the trenches. With multiple IGBTs, the trenches can be arranged in striped, island-like, or lattice format.

REFERENCES:
patent: 4827321 (1989-05-01), Baliga
patent: 5714775 (1998-02-01), Inoue
patent: 5814858 (1998-09-01), Williams

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