Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – In integrated structure
Reexamination Certificate
2005-07-26
2005-07-26
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
In integrated structure
C257S198000
Reexamination Certificate
active
06921958
ABSTRACT:
A semiconductor device which IGBT (Z1) and a control circuit (B1) for driving the IGBT (Z1) are formed on the same semiconductor substrate by using a junction isolation technology, includes an input terminal (P1) for inputting a drive signal of the IGBT (Z1), a Schottky barrier diode (D2) having an anode connected to the input terminal (P1) and a cathode connected to an input terminal (B11) of the control circuit (B1), and a p-channel MOSFET (T1) for shorting both ends of the Schottky barrier diode (D2) when the voltage of the drive signal input to the input terminal (P1) is higher than a predetermined voltage, thereby latch-up of the parasitic element is prevented and a transmission loss of the input signal can be reduced.
REFERENCES:
patent: 5536958 (1996-07-01), Shen et al.
patent: 5631494 (1997-05-01), Sakurai et al.
patent: 5654225 (1997-08-01), Zambrano
patent: 5723916 (1998-03-01), Disney et al.
patent: 6021058 (2000-02-01), Yasohara et al.
patent: 6441463 (2002-08-01), Yasuda
patent: 2002-16254 (2002-01-01), None
K. Yoshida, et al., “A Self-Isolated Intelligent IGBT for Driving Ignition Coils”, Proceedings of 1998 International Symposium on Power Semiconductor Devices & ICs, Kyoto, pp. 105-108.
Mitsubishi Denki & Kabushiki Kaisha
Oblon, Spivak, MClelland, Maier & Neustadt, P.C.
Trinh (Vikki) Hoa B.
Weiss Howard
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