IGBT with increased ruggedness

Details IGBT with increased ruggedness IGBT with increased ruggedness

1994-09-19

1996-08-20

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With switching speed enhancement means

257140, 257146, 257147, 257343, 257493, H01L 2974, H01L 31111, H01L 2358

Patent

active

055481337

ABSTRACT:
An auxiliary MOSFET is integrated into a lateral IGBT structure with the source and drain of the auxiliary MOSFET in parallel with the emitter-base circuit of the IGBT. A driver, integrated with the IGBT chip, turns off the base emitter voltage to the IGBT before turning off the auxiliary MOSFET during turn off. The auxiliary MOSFET is turned off again at the beginning of the conduction period to ensure full conductivity modulation of the DMOS drain and maximum gain of the PNP transistor. Short circuit protection and overtemperature protection circuits are also integrated into the chip.

REFERENCES:
patent: 4980743 (1990-12-01), Nakagawa et al.

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