Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1995-11-17
1998-08-25
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257140, 257488, 257491, H01L 2974, H01L 2358, H01L 31141
Patent
active
057985383
ABSTRACT:
A monolithic IGBT and control circuit therefor are integrated into a common chip. The IGBT is formed in a first area of the chip and the control circuit is formed in a second laterally spaced area and in a P well. Means are provided to prevent hole injection from the P.sup.+ substrate into the P well during IGBT operation. The means includes a sufficient spacing between the areas; a P.sup.+ collection region between the areas or an N.sup.+ diffusion between the areas which is connected to the P.sup.+ substrate. The areas are surrounded by a common field termination structure which, however, leaves a small surface bridge between the two areas. Control conductors from the control area to the IGBT area cross over the narrow area, and not over the field terminations. A lateral PNP transistor which is integrated in the chip and is external of the IGBT area is connected to the central N.sup.+ diffusion between IGBT and control areas and permits its connection to the P type substrate only when the IGBT area conducts.
REFERENCES:
patent: 5065212 (1991-11-01), Ohata et al.
Nadd Bruno C.
Ranjan Niraj
Fahmy Wael
International Rectifier Corporation
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