Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1992-09-30
1994-11-01
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257139, 257161, 257140, H01L 2702, H01L 27102, H01L 2991
Patent
active
053609840
ABSTRACT:
A semiconductor device comprises a semiconductor substrate of a first conductive type with a low impurity density; a first region of a second conductive type; a second region of the first conductive type with a high impurity density formed in a surface of the first region; a third region of the second conductive type with a high impurity density; a gate insulating film formed on the surface of the first region intervening between an exposed surface of the semiconductor substrate and the second region; a gate electrode formed on the gate insulating film; a fourth region of the second conductive type opposite to the first region on the other surface of the semiconductor substrate; a fifth region of the first conductive type with a high impurity density which is opposite to the third region and adjacent to the fourth region; a first electrode commonly brought into contact with the first and second regions; a second electrode brought into contact with the second region and connected to the first electrode; and a third electrode commonly brought into contact with the fourth and fifth regions.
REFERENCES:
patent: 4742382 (1988-05-01), Jaecklin
patent: 4791470 (1988-12-01), Shinohe et al.
patent: 5047824 (1991-09-01), Tokunoh et al.
patent: 5162876 (1992-11-01), Kitagawa et al.
Fahmy Wael
Fuji Electric & Co., Ltd.
Hille Rolf
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