LandOfFree - US Patents - Listing for Active solid-state devices (e.g., transistors, solid-state diode

Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure

Grounding inserts

Active solid-state devices (e.g. – transistors – solid-state diode – With shielding – With means to shield device contained in housing or package...

Grounding mechanism for semiconductor devices

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package

Grounding of package substrates

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

Group 3-5 compound semiconductor and light emitting diode

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

Group 3-5 nitride semiconductor multilayer substrate, method...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Having graded composition

Group II-VI compound semiconductor light emitting devices and an

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Group II-VI compound semiconductor light emitting devices and an

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Group II-VI material semiconductor optical device with strained

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Group II-VI radiation detector for simultaneous visible and IR d

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

Group II-VI semiconductor devices

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Group III intride semiconductor light emitting element

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor

Group III nitride based FETs and HEMTs with reduced trapping...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device

Group III nitride based flip-chip integrated circuit and...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device

Group III nitride based flip-chip intergrated circuit and...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Group III nitride based light emitting diode structures with...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Group III nitride based quantum well light emitting device...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

Group III nitride based semiconductor luminescent element

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Group III nitride based superlattice structures

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...

Group III nitride compound semiconductor