Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2007-04-05
2011-12-13
Loke, Steven (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S014000, C257S191000, C257S103000, C438S022000
Reexamination Certificate
active
08076684
ABSTRACT:
A group III nitride semiconductor light emitting element, comprising having a light emitting layer with a multiquantum well structure formed of a group III nitride semiconductor. The light emitting layer has plural well layers, and the plural well layers are formed to coincide in emission wavelength with each other.
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Goodwin David
Loke Steven
McGinn IP Law Group PLLC
Toyoda Gosei Co,., Ltd.
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