Group III intride semiconductor light emitting element

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Reexamination Certificate

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Details

C257S014000, C257S191000, C257S103000, C438S022000

Reexamination Certificate

active

08076684

ABSTRACT:
A group III nitride semiconductor light emitting element, comprising having a light emitting layer with a multiquantum well structure formed of a group III nitride semiconductor. The light emitting layer has plural well layers, and the plural well layers are formed to coincide in emission wavelength with each other.

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