Group 3-5 compound semiconductor and light emitting diode

Details Group 3-5 compound semiconductor and light emitting diode Group 3-5 compound semiconductor and light emitting diode

2007-04-17

2007-04-17

Dickey, Thomas (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

Reexamination Certificate

active

10162404

ABSTRACT:
A group 3–5 compound semiconductor comprising an interface of two layers having lattice mismatch, an intermediate layer having a film thickness of 25 nm or more and a quantum well layer, in this order. The compound semiconductor has high crystallinity and high quality, and suitably used for a light emitting diode.

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