Group II-VI radiation detector for simultaneous visible and IR d

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

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257 78, 257440, 257461, H01L 310256, H01L 310296, H01L 2922

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active

055679757

ABSTRACT:
A photovoltaic diode unit cell (10) includes a first layer (14) having a first type of electrical conductivity and a second layer (16) of Group II-VI material having a second type of electrical conductivity that differs from the first type. The first layer and the second layer are coupled together so as to form a photovoltaic junction (15) therebetween. The photovoltaic junction is coupled via electrical interconnects (18, 20, 22) to a readout 24 and collects first charge carriers resulting from an absorption of IR radiation within the layer 14. The junction also collects second charge carriers resulting from the absorption of visible light in a region of highly graded crystal potential formed, in a Liquid Phase Epitaxy (LPE)-grown embodiment of this invention, at an interface of a substrate and the first layer. The substrate is subsequently removed, preferably by a mechanical operation followed by a wet chemical etch, to expose the region of highly graded crystal potential.

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J. M. Pawlikowski and P. Becla, "Some Properties of Photovoltaic Cd.sub.x Hq.sub.1 -.sub.x Te Detectors For Infrared Radiation.sup.* ", pp. 331-337, Institute of Physics, Technical University, 50-370 Wroclaw Wybzeize Wyspianskiego 27 Poland.
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