Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2007-06-05
2007-06-05
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S013000, C257S079000, C257S099000, C257S101000
Reexamination Certificate
active
10849348
ABSTRACT:
Semiconductor devices containing group II-VI semiconductor materials are disclosed. The devices may include a p-n junction containing a p-type group II-VI semiconductor material and an n-type semiconductor material. The p-type group II-VI semiconductor includes a single crystal group II-VI semiconductor containing atoms of group II elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is greater than about 1016atoms·cm−3, the semiconductor resistivity is less than about 0.5 ohm·cm, and the carrier mobility is greater than about 0.1 cm2/V·s. The semiconductor devices may include light emitting diodes, laser diodes, field effect transistors, and photodetectors.
REFERENCES:
patent: 3664867 (1972-05-01), Galli et al.
patent: 3864725 (1975-02-01), Merrin
patent: 4399441 (1983-08-01), Vaughn et al.
patent: 5331655 (1994-07-01), Harder et al.
patent: 6291085 (2001-09-01), White et al.
patent: 6589362 (2003-07-01), Haga
patent: 6610141 (2003-08-01), White et al.
patent: 6617183 (2003-09-01), Kadota et al.
patent: 6624441 (2003-09-01), Cantwell et al.
patent: 6664565 (2003-12-01), Sano et al.
patent: 6673478 (2004-01-01), Kato et al.
patent: 6707074 (2004-03-01), Yoshii et al.
patent: 6838308 (2005-01-01), Haga
patent: 2003/0226499 (2003-12-01), Teherani
patent: 2004/0061114 (2004-04-01), Yan et al.
patent: 1219731 (2002-07-01), None
patent: 2002-68890 (2002-03-01), None
Itani, Kenya, et al., “Low-Dislocation-Density GaAs Wafers Grown by Vertical Gradient Freeze Process, Suitable for Mass prodution of Semiconductor Lasers,” Hitachi Cable Review No. 20, Aug. 2001, pp. 35-38.
Look, D.C., et al. “The Future of ZnO Light Emitters,” Phys. Stat. Sol. (2004), pp. 1-10.
Pearton, S.J., et al. “Wide Band Gap Ferromagnetic Semiconductors and Oxides,” Journal of Applied Physics vol. 93, No. 1, Jan. 1, 2003, pp. 1-13.
Web Page '99 SBIR Phase I . . . Topic 14—Electronic Materials, http://www-ee.eng.buffalo.edu/faculty/paololin/492/semicon.pdf, “Low-Temperature Hydrothermal Growth of Zno for Seminconductor Substrates,” Feb. 26, 2004, 2 pages.
Web Page “Semiconductor Photonics”, 3 pages.
Aulbur, W.; Density Functinal Theory: Basic Ideas & Applications; Ohio State University.
Look, D.C., and Claflin, B.; P-type doping and devices based on ZnO; Aug. 2003; Wiley-VCH Verlag GmbH & Co.
Zunger, A.; Practical Doping Principles; NCPV and Solar Program Review Meeting 2003; pp. 831-835.
Zhang, S.B., Wei, S.H., and Zunger, A.; Intrinsicn-type versusp-type doping asymmetry and the defect physics of ZnO; Physical Review B; Jan. 31, 2001; pp. 075205-1-075205-7; vol. 63; The American Physical Society.
Limpijumnong, S., Zhang, S.B., Wei, S-H., and Park C.H; Doping by Large-Size-Mismatched Impurities: The Microscopic Orgin of Arsenic- or Antimony-Dopedp-Type Zinc Oxide; Physical Review Letters; Apr. 16, 2004; vol. 92, No. 15; The American Physical Society.
Yamamoto, T., and Katayama-Yoshida, H.; Solutiion Using a Codoping Method toUnipolarityfor the Fabrication ofp-type ZnO; Japanese Journal of Applied Physics; Feb. 15, 1999; pp. L 166-L 169, vol. 38; Japanese Journal of Applied Physics Publication Board.
Park, C.H., Zhang, S.B., and Wei, S-H.; Origin ofp-type doping difficulty in ZnO: The impurity perspective; Physical Review B; Aug. 5, 2002; pp. 073202-1-073202-3; vol. 66; The American Physical Society.
Tsukazaki, A., Atsushi, T., Ohtomo, A., Onuma, T., Ohtani, M., Makino, T., et al; Repeated temperature modulation epitaxy forp-type doping and light-emitting diode based on ZnO; Nature Materials; Jan. 2005; pp. 42-46; vol. 4; Nature Publishing Group.
Nonaka, M., Matsushima, S., Mizuno, M., and Kobayashi, K.; Electronic Structure of Group III Elements Dopes into ZnO by Using Molecular Orbital Calculation; Chemistry Letters 2002; Feb. 20, 2002; pp. 580-581; The Chemical Society of Japan.
Wang, L.G., and Zunger, A.; Cluster-Doping Approach for Wide-Gap Semiconductors: The Case ofp-type ZnO; Physical Review Letters; Jun. 27, 2003; pp. 256401-1-256401-4; vol. 90, No. 25; The American Physical Society.
Norton, D.P., Heo, Y.W., Ivill, M.P., IP, K., Pearton, S.J., et al; ZnO: growth, doping and processing; Materialstoday; Jun. 2004; Elsevier Ltd.
Lee, E-C., Kim, Y.-S., Jin, Y.-G., and Chang, K.J.; First-Principles Study ofp-Type Doping and Codoping in ZnO; Journal of the Korean Physical Society; Dec. 2001; pp. S23-S26; vol. 39.
Morhain, C., Teisseire, M., Vezian, S., Vigue, F., Raymond, F., et al; Spectroscopy of Excitons, Bound Excitons and Impurities in h-ZnO Epilayers; Sep. 30, 2001; pp. 881-885; vol. 229, No. 2; Wiley VCH; Berlin.
Bandyopadhyay, S., Paul, G.K., Roy, R., Sen, S.K., and Sen, S; Study of structural and electrical properties of grain-boundary modified ZnO films prepared by sol-gel technique; Materials Chemistry and Physics; May 17, 2001; pp. 83-91; vol. 74; Elsevier Science B.V.
Wilkinson, J., Xiong, G., Ucer, K.B., and Williams, R.T.; Lifetime and Oscillator Strength of Excitonic Luminescence in Zinc Oxide; Department of Physics, Wake Forest University, Winston-Salem, N.C.
Kobayashi, A., Sankey, O.F., and Dow, J.D.; Deep energy levels of defects in the wurtzite semiconductors AIN, CdS, CdSe, and ZnO; Physical Review B; Jul. 15, 1983; pp. 946-956; vol. 28, No. 2; The American Physical Society.
Daneu, N., Reenik, A., and Bernik, S.; Grain Growth Control in Sb2O3-Doped Zinc Oxide; Journal of the American Ceramic Society; 2003; pp. 1379-1394; vol. 86, No. 8.
Ohyama, M.; Sol-Gel Preparation of Transparent and Conductive Aluminum-Doped Zinc Oxide Films with Highly Preferential Crystal Orientation; Journal of the American Ceramic Society; 1998; pp. 1622-1632; vol. 81, No. 6.
Duan, X.L., Yean, D.R., Cheng, X.F., Sun. H.Q., Sun, Z.H., et al; Microstructure and Properties of Co2: ZnAl2O4/Si02Nanocomposite Glasses Prepared by Sol-Gel Method; Journal of the American Ceramic Society; 2005; pp. 399-403; vol. 88, No. 2.
Sohn, K.S., Hwang, D.K., and Myoung, J.M.; Time Integrated/Resolved Photoluminescense of ZnO Films Deposited on Sapphire and GaAs; Japanese Journal of Applied Physics; Dec. 2003; pp. 7376-7378; The Japan Society of Applied Physics.
Sun, X.W.; Optical properties of epitaxially grown zinc oxide films on sapphire by pulsed laser deposition; Journal of Applied Physics; Jul. 1, 1999; pp. 408-411; vol. 86, No. 1; American Institute of Physics.
Burden, A.P., Bishop, H.E., Brierley, M., Friday, J.M., Hood, C., et al.; Incorporating consumer-priced field emitting inks into arrays of triode devices; Solid State Electronics; 2001; pp. 987-996; vol. 45; Printable Field Emitters Ltd.
Minami, T., Miyata, T., Shirai, T., and Nakatani, T.; Electroluminescent Oxide Phosphor Thin Films Prepared by a Sol-gel Process; Mat. Res. Soc. Symp. Proc.; 2000; pp. Q4.3.1-Q4.3.6; vol. 621; Materials Research Society.
Qiu, C., Chen, H., Wong, M., and Kwok, H.S.; Dependence of the Current and Power Efficiencies of Organic Light-Emitting Diode on the Thickness of the Constituent Organic Layers; IEEE Transactions On Electron Devices; Sep. 2001; pp. 2131-2137; vol. 48; IEEE.
Matsuda, T., Kawabe, M., Iwata, H., and Ohzone, T.; Visible Electroluminescence from MOS Capacitors with Si-implanted SiO2; IEICE Trans. Electron.; Sep. 11, 2002; pp/ 1895-1904; vol. E85-C, No. 11.
Ong, H.C., Li, A.S.K., and Du, G.T.; Depth profiling of ZnO thin films by cathodoluminescence; Applied Physics Letters; Apr. 30, 2001; pp. 2667-2669; vol. 78, No. 18; American Institute of Physics.
Washington, P.L., Ong, H.C., Dai, J.Y., and Chang, R.P.H.; Determination of the optical constants of zinc oxide thin films by spectroscopic ellipsometry; Applied Physics Letter; Jun. 22, 1998; pp. 3261-3263; vol. 72, No. 25; American Institute of Physics.
Sekiguchi, T., Ohashi, N., and Yamane, H.; Cathodoluminescence Study of ZnO and GaN; Solid State Phenomena; 1998; pp. 171-182; vols. 63-64; Scitec Publications; Switzerland.
Kouyate, D., Ronfard-Haret, J.-C., and Kossanyi, J.; Photo- and electro-luminescence of rare earth-dop
Burgener, II Robert H.
Felix Roger L.
Renlund Gary M.
Kirton & McConkie
Louie Wai-Sing
Witt Evan R.
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