Group III nitride compound semiconductor

Details Group III nitride compound semiconductor Group III nitride compound semiconductor

2007-02-13

2007-02-13

Dickey, Thomas L. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

C257S078000, C257S095000, C257S103000

Reexamination Certificate

active

11172918

ABSTRACT:
An Al0.15Ga0.85N layer2is formed on a silicon substrate1in a striped or grid pattern. A GaN layer3is formed in regions A where the substrate1is exposed and in regions B which are defined above the layer2. At this time, the GaN layer grows epitaxially and three-dimensionally (not only in a vertical direction but also in a lateral direction) on the Al0.15Ga0.85N layer2. Since the GaN layer grows epitaxially in the lateral direction as well, a GaN compound semiconductor having a greatly reduced number of dislocations is obtained in lateral growth regions (regions A where the substrate1is exposed).

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