Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1995-06-07
1997-03-11
Ng o, Ng an V.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 23, 257101, 257102, 257103, 372 45, H01L 3300
Patent
active
056104138
ABSTRACT:
Group II-VI compound semiconductor light emitting devices which include at least one II-VI quantum well region of a well layer disposed between first and second barrier layers is disclosed. The quantum well region is sandwiched between first and second cladding layers of a II-VI semiconductor material. The first cladding layer is formed on and lattice matched to the first barrier layer and to a substrate of a III-V compound semiconductor material. The second cladding layer is lattice matched to the second barrier layer. The quantum well layer comprises a II-VI compound semiconductor material having the formula A.sub.x B.sub.(1-x) C wherein A and B are two different elements from Group II and C is at least one element from Group VI. When the second cladding layer has a p-type conductivity, a graded bandgap ohmic contact according to the present invention can be utilized. The graded bandgap contact can be a single continuously graded II-VI p-type region or a plurality of cells with each of the cells having first and second thin layers of first and second p-type II-VI semiconductor materials respectively. Another embodiment of the present invention discloses a monolithic multicolor light emitting element capable of emitting four colors and a method for fabricating same. The monolithic multicolor element includes four II-VI semiconductor light emitting devices formed on a single III-V substrate.
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Fan Yongping
Gunshor Robert L.
Han Jung
He Li
Nurmikko Arto V.
Ng o Ng an V.
Research Corporation Technologies Inc.
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