Group II-VI compound semiconductor light emitting devices and an

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257 23, 257101, 257102, 257103, 372 45, H01L 3300

Patent

active

056104138

ABSTRACT:
Group II-VI compound semiconductor light emitting devices which include at least one II-VI quantum well region of a well layer disposed between first and second barrier layers is disclosed. The quantum well region is sandwiched between first and second cladding layers of a II-VI semiconductor material. The first cladding layer is formed on and lattice matched to the first barrier layer and to a substrate of a III-V compound semiconductor material. The second cladding layer is lattice matched to the second barrier layer. The quantum well layer comprises a II-VI compound semiconductor material having the formula A.sub.x B.sub.(1-x) C wherein A and B are two different elements from Group II and C is at least one element from Group VI. When the second cladding layer has a p-type conductivity, a graded bandgap ohmic contact according to the present invention can be utilized. The graded bandgap contact can be a single continuously graded II-VI p-type region or a plurality of cells with each of the cells having first and second thin layers of first and second p-type II-VI semiconductor materials respectively. Another embodiment of the present invention discloses a monolithic multicolor light emitting element capable of emitting four colors and a method for fabricating same. The monolithic multicolor element includes four II-VI semiconductor light emitting devices formed on a single III-V substrate.

REFERENCES:
patent: 3148085 (1964-09-01), Wiegmann
patent: 3942065 (1976-03-01), Russ
patent: 4012243 (1977-03-01), Keil et al.
patent: 4148045 (1979-04-01), Fang et al.
patent: 4211586 (1980-07-01), Fang et al.
patent: 4254429 (1981-03-01), Yamazaki
patent: 4411728 (1983-10-01), Sakamoto
patent: 4647813 (1987-03-01), Kitabayashi et al.
patent: 4672266 (1987-06-01), Taniguchi et al.
patent: 4810937 (1989-03-01), Havel
patent: 4868615 (1989-09-01), Kamata
patent: 4916496 (1990-04-01), Tomomura et al.
patent: 4955031 (1990-09-01), Jain
patent: 4992837 (1991-02-01), Sakai et al.
patent: 5008891 (1991-04-01), Morita
patent: 5010376 (1991-04-01), Nishimura et al.
patent: 5037709 (1991-08-01), Tomomura et al.
patent: 5043774 (1991-08-01), Shiki
patent: 5045894 (1991-09-01), Migita et al.
patent: 5045897 (1991-09-01), Ahlgren
patent: 5055363 (1991-10-01), Tomomura et al.
patent: 5061973 (1991-10-01), Chu
patent: 5081632 (1992-01-01), Migita et al.
patent: 5091758 (1992-02-01), Morita
patent: 5097298 (1992-03-01), Ehara
patent: 5103269 (1992-04-01), Tomomura et al.
patent: 5113233 (1992-05-01), Kitagawa et al.
patent: 5119386 (1992-06-01), Narusawa
patent: 5213998 (1993-05-01), Qiu et al.
patent: 5274269 (1993-12-01), DePuydt et al.
patent: 5291507 (1994-03-01), Haas et al.
patent: 5294833 (1994-03-01), Schetzina
patent: 5366927 (1994-11-01), Schetzina
patent: 5377214 (1994-12-01), Ahn
patent: 5389800 (1995-02-01), Itaya et al.
patent: 5396103 (1995-03-01), Oiu et al.
patent: 5404027 (1995-04-01), Haase et al.
patent: 5406574 (1995-04-01), Kennie et al.
patent: 5422902 (1995-06-01), Mensz
Chang et al., "Source Shaping in the Fabrication of Semiconductor Light-Emitting Diodes by Molecular Beam Epitaxy," IBM Technical Disclosure Bulletin, vol. 15, No. 1, Jun. 1972, pp. 180-181.
Kobuyashi et al., "The MBE Growth of Widegap II-VI Injection Lasers and LED's," Optoelectron, Devices, Technol., vol. 7, No. 1, Jun. 1992 (abs), pp. 1-10.
Akimoto et al., "Electroluminescence in an Oxygen-Doped ZnSe p-n Junction Grown by Molecular Beam Epitaxy," Japanese J. of Appl. Phys., vol. 28, No. 4, pp. L531-L534 (1989).
Butkhuzi et al., "Blue Light Emitting Diodes on the Base of ZnSe Single Crystals," J. of Crystal Growth 117, pp. 1055-1058 (1992).
DePuydt et al., "ZnSe-Based Laser Diodes," J. of Crystal Growth 117, p. 1078 (1992).
Fan et al., "Blue Electroluminescence in Forward-Biased ZnSe Diodes," IEEE Transactions of Electron Devices, vol. ED-28, No. 4, p. 428-433 (1981).
Fu et al., "Isoelectronic 8 Doping in a ZnSe Superlattice: Tellurium as an Efficient Hole Trap," Physical Review B, vol. 39, No. 5, pp. 3173-3177 (1989).
Guan et al., "Photopumped Antiguide Blue Lasers Fabricated from Molecular Beam Epitaxial ZnSe on GaAs," IEE Photonics Technology Letters, vol. 3, No. 8, pp. 685-687 (1991).
Haase et al., "Characterization of p-Type ZnSe," J. Appl. Phys., vol. 67, No. 1, pp. 448-452 (1990).
Haase et al., "Blue-Green Laser Diodes," Appl. Phys. Lett. vol. 59, No. 11, pp. 1272-1274 (1991).
Hobbs, "Diodes Produce Ultrafast Pulses and Show Blue-Green Emission," Laser Focus World, pp. 99-102 (May 1992).
Jeon et al., "Room-Temperature Blue Lasing Action in (Zn,Cd)Se/ZnSe Optically Pumped Multiple Quantum Well Structures on Lattice-Matched (Ca,In)As Substrates," Appl. Phys. Lett., vol. 57, No. 3, pp. 2413-2415 (1990).
Kolodziejski et al., "Excitonic Trapping from Atomic Layer Epitaxial ZnTe Within ZnSe/(Zn,Mn)Se Heterostructures," Appl. Phys. Lett., vol. 52, No. 13, pp. 1080-1082 (1988).
Lee et al., "Widely Tunable Exciton Radiative Recombination Rate in ZnSe Based Superlattic Structures," Superlattices and Microstructures, vol. 5, No. 3, pp. 345-349 (1989).
Migita et al., "ZnSe p-n Junctions Proudced by Metalorganic Molecular-Beam Epitaxy," J. Appl. Phys., vol. 68, No. 2, pp. 880-882 (1990).
Niina et al., "Ga-Doped ZnSe Grown by Molecular Beam Epitaxy for Blue Light Emitting Diodes," Japanese J. of Appl. Phys., vol. 21, No. 6, pp. L387-L389 (1982).
Nishizawa et al., "Blue Light Emission from ZnSe p-n Junctions," J. Appl. Phys., vol. 57, No. 6, pp. 2210-2216 (1985).
Ohkawa et al., "Blue Electroluminescence from ZnSe p-n Junction Light-Emitting Diodes," Japanese J. of Appl. Phys., vol. 30, No. 12B, pp.3873-3875 (1991).
Park et al., "P-type ZnSe by Nitrogen Atom Beam Doping During Molecular Beam Epitaxial Growth," Appl. Phys. Lett., vol. 57, No. 20, pp. 2127-2129 (1990).
Qiu et al., "Heavily Doped p-ZnSe:N Grown by Molecular Beam Epitaxy," Appl. Phys. Lett., vol. 59, No. 23, pp. 2992-2994 (1991).
Ren et al., "Blue (ZnSe) and Green (ZnSe.sub.0.9 Te.sub.0.1) Light Emitting Diodes," J. of Crystal Growth 111, pp. 829-832 (1991).
Ren et al., "ZnSe Light-Emitting Diodes," Appl. Phys. Lett., vol. 57, No. 18, pp. 1901-1903 (1990).
Walecki et al., "Band Offsets and Exciton Confinement in Zn.sub.1-y Cdy Se/Zn.sub.1-x Mn.sub.x Se Quantum Wells," vol. 57, No. 5, pp. 466-468 (1990).
Walecki et al., "Ultraviolet and Blue Holographic Lithography of ZnSe Epilayers and Heterostructures with Feature Size to 100 nm and Below," Appl. Phys. Lett., vol. 57, No. 25, pp. 2641-2643 (1990).
Yang et al., "Room Temperature Blue Lasing of ZnSxSe.sub.1-x Alloys by Photopumping," Appl. Phys. Lett., vol. 60, No. 8, pp. 926-928 (1992).
Yasuda et al., "Metalorganic Vapor Phase Epitaxy of Low-Resistivity p-Type ZnSe," Appl. Phys. Lett. vol. 52, No. 1, pp. 57-59 (1988).
"Strained-Lattice Growth Increases Efficiency of Blue-Green Diode Lasers," Laser Focus World, p. 9 (Feb. 1992).
Haase et al., "Short Wavelength II-VI Laser Diodes," Proceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds, Sep. 9-12, 1991, IBM Technical Disclosure Bulletin, vol. 15, pp. 10-16.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Group II-VI compound semiconductor light emitting devices and an does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Group II-VI compound semiconductor light emitting devices and an, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Group II-VI compound semiconductor light emitting devices and an will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-445277

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.