Group 3-5 nitride semiconductor multilayer substrate, method...

Details Group 3-5 nitride semiconductor multilayer substrate, method... Group 3-5 nitride semiconductor multilayer substrate, method...

2006-05-02

2011-11-08

Menz, Laura M (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

C257S094000, C257S615000

Reexamination Certificate

active

08053811

ABSTRACT:
A group 3-5 nitride semiconductor multilayer substrate (1) and a method for manufacturing such substrate are provided. A semiconductor layer (12) is formed on a base substrate (11), and a mask (13) is formed on the semiconductor layer (12). Then, after forming a group 3-5 nitride semiconductor crystalline layer (14) by selective growing, the group 3-5 nitride semiconductor crystalline layer (14) and the base substrate (11) are separated. The crystallinity of the semiconductor layer (12) is lower than that of the group 3-5 nitride semiconductor crystalline layer (14).

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