Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-06-09
1994-11-08
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 17, 257 18, 372 45, 372 46, H01L 29161, H01L 2712
Patent
active
053629744
ABSTRACT:
This invention provides a blue light semiconductor optical device capable of effectively oscillating in a temperature range above room temperature. A double hetero structure semiconductor optical device according to the invention is made of a compound semiconductor containing Zn and/or Cd as group II elements and S and/or Se and/or Te as group VI elements and comprises an active layer, a light confining layer and a cladding layer arranged on a semiconductor substrate as well as a multiquantum barrier structure having a strained superlattice layer in part of the cladding layer or the light confining layer for an effect of reflecting incident carriers as waves in phase conditions capable of allowing mutual enhancement of the incident and reflected waves.
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Appl. Phys. Lett. 59 (27), Dec. 30, 1991, pp. 3619-3621, Jeon et al., "Blue-green injection laser diodes in (Zn,Cd) Se/ZnSe QW".
Electronics Letters, vol. 22, No. 19, Sep. 11, 1986, pp. 1008-1009, Iga et al., "Electron reflectance of multiquantum barrier (MQB)".
Iga, et al., Conference on Laser and Electro-Optics, Calif., Tech. Digest 12,5 (1992), "Visible Laser Diodes", paper No. 4.
Appl. Phys. Lett. 55 (19), Oct. 30, 1989, pp. 1877-1878, Fritz et al., "Band-edge alignment in heterostructures".
Xie et al., "Blue and Blue/Green Injection Laser Diodes and Light Emitting Diodes", Japan Institute of Appl. Phys., Spring Conference 1992.
Iga Kenichi
Irikawa Michinori
Hille Rolf
The Furukawa Electric Co. Ltd.
Tran Minhloan
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