Group III nitride based semiconductor luminescent element

Details Group III nitride based semiconductor luminescent element Group III nitride based semiconductor luminescent element

2006-02-28

2006-02-28

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257S094000, C257S745000

Reexamination Certificate

active

07005684

ABSTRACT:
In a flip chip type Group III nitride compound semiconductor light-emitting element, an Au layer is provided on each of a surface of a p-side electrode and a surface of an n-side electrode with interposition of a Ti layer.

REFERENCES:
patent: 5006908 (1991-04-01), Matsuoka et al.
patent: 5563422 (1996-10-01), Nakamura et al.
patent: 6060730 (2000-05-01), Tsutsui
patent: 6172382 (2001-01-01), Nagahama et al.
patent: 6232623 (2001-05-01), Morita
patent: 6278173 (2001-08-01), Kobayashi et al.
patent: 6333522 (2001-12-01), Inoue et al.
patent: 6335218 (2002-01-01), Ota et al.
patent: 6414339 (2002-07-01), Tsutsui
patent: 6445011 (2002-09-01), Hirano et al.
patent: 6577006 (2003-06-01), Oota et al.
patent: 6711191 (2004-03-01), Kozaki et al.
patent: 6713877 (2004-03-01), Hirano et al.
patent: 6800501 (2004-10-01), Miki et al.
patent: 2001/0038103 (2001-11-01), Nitta et al.
patent: 2003/0038294 (2003-02-01), Sano
patent: 1264181 (2000-08-01), None
patent: 3-183173 (1991-08-01), None
patent: 5-129658 (1993-05-01), None
patent: 10125655 (1998-05-01), None
patent: 10190055 (1998-07-01), None
patent: 11054843 (1999-02-01), None
patent: 11074558 (1999-03-01), None
patent: 2000-164928 (2000-06-01), None
patent: 2000-315819 (2000-11-01), None
Koide et al., Dependence of electrical properties on work functions of metals contacting to p-type GaN, 1997, Elsevier Science, Applied Surface Science, 373-79.
Rennie et al., Effect of metal type on the contacts to n-type and p-type GaN, 1998, Elsevier Science, JOurnal of Crystal Growth, pp. 711-15.
Chinese Office Action dated Aug. 26, 2005 (with English translation.) Chinese Application No. 02811199.0.

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